-
2
-
-
20444447197
-
An 800-MHz embedded DRAM with a concurrent refresh mode
-
June
-
T. Kirihata, P. Parries, D. R. Hanson, H. Kim, J. Golz, G. Fredeman, R. Rajeevakumar, J. Griessemer, N. Robson, A. Cestero, B. A. Khan, G. Wang, M. Wordeman, and S. S. Iyer, "An 800-MHz embedded DRAM with a concurrent refresh mode," IEEE J. Solid-State Circuits, vol. 40, no. 6, pp. 1377-1387, June 2005.
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.6
, pp. 1377-1387
-
-
Kirihata, T.1
Parries, P.2
Hanson, D.R.3
Kim, H.4
Golz, J.5
Fredeman, G.6
Rajeevakumar, R.7
Griessemer, J.8
Robson, N.9
Cestero, A.10
Khan, B.A.11
Wang, G.12
Wordeman, M.13
Iyer, S.S.14
-
3
-
-
0032001924
-
Dual-period self-refresh scheme for low-power DRAM's with on-chip PROM mode registers
-
Feb
-
Y. Idei, K. Shimohigashi, M. Aold, H. Noda, H. Iwai, K. Sato, and T. Tachibana, "Dual-period self-refresh scheme for low-power DRAM's with on-chip PROM mode registers," IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 253-259, Feb. 1998.
-
(1998)
IEEE J. Solid-State Circuits
, vol.33
, Issue.2
, pp. 253-259
-
-
Idei, Y.1
Shimohigashi, K.2
Aold, M.3
Noda, H.4
Iwai, H.5
Sato, K.6
Tachibana, T.7
-
5
-
-
51749105703
-
A 1.8V p(seudo)SRAM using standard 140nm DRAM technology with self adapting clocked standby operation
-
T. Janik, E. Liau, H. Lorenz, M. Menke, E. Plaettner, J. Scheden, H. Seitz, and E. Vega-Ordonez "A 1.8V p(seudo)SRAM using standard 140nm DRAM technology with self adapting clocked standby operation," 2006 IEEE inter. Symp. on Circuits and Systems Proceedings, pp. 193-197, 2001.
-
(2001)
2006 IEEE inter. Symp. on Circuits and Systems Proceedings
, pp. 193-197
-
-
Janik, T.1
Liau, E.2
Lorenz, H.3
Menke, M.4
Plaettner, E.5
Scheden, J.6
Seitz, H.7
Vega-Ordonez, E.8
-
6
-
-
0034316440
-
A 16-Mb 400-MHz loadless CMOS four-transistor SRAM macro
-
Nov
-
K. Takeda, Y. Aimoto, N. Nakamura, H. Toyoshima, T. Iwasaki, K. Noda, K. Matsui, S. Itoh, S. Masuoka, T. Horiushi, A. Nakagawa, K. Shimogawa, and H. Takahashi, "A 16-Mb 400-MHz loadless CMOS four-transistor SRAM macro," IEEE J. of Solid-State Circuits, vol. 35, no. 11, pp. 1631-1640, Nov. 2000.
-
(2000)
IEEE J. of Solid-State Circuits
, vol.35
, Issue.11
, pp. 1631-1640
-
-
Takeda, K.1
Aimoto, Y.2
Nakamura, N.3
Toyoshima, H.4
Iwasaki, T.5
Noda, K.6
Matsui, K.7
Itoh, S.8
Masuoka, S.9
Horiushi, T.10
Nakagawa, A.11
Shimogawa, K.12
Takahashi, H.13
-
7
-
-
0029409121
-
A circuit technology for a self-refresh 16Mb DRAM with less than 0.5μA/Mb data-retention current
-
Nov
-
H. Yamauchi, T. Iwata, A. Uno, M. Fukumoto, and T. Fujita, "A circuit technology for a self-refresh 16Mb DRAM with less than 0.5μA/Mb data-retention current," IEEE J. of Solid-State Circuits, vol. 35, no. 11, pp. 1174-1182, Nov. 1995.
-
(1995)
IEEE J. of Solid-State Circuits
, vol.35
, Issue.11
, pp. 1174-1182
-
-
Yamauchi, H.1
Iwata, T.2
Uno, A.3
Fukumoto, M.4
Fujita, T.5
-
8
-
-
0031259013
-
A self-off-time detector for reducing standby current of DRAM
-
Oct
-
H.-J Song, "A self-off-time detector for reducing standby current of DRAM," IEEE J. of Solid-State Circuits, vol. 32, no. 10, pp. 1535-1542, Oct. 1997.
-
(1997)
IEEE J. of Solid-State Circuits
, vol.32
, Issue.10
, pp. 1535-1542
-
-
Song, H.-J.1
-
9
-
-
15844397647
-
A temperature-insensitive self-recharging circuitry used in DRAMs
-
March
-
C.-C Wang, Y.-L. Tseng, and C.-C Chiu, "A temperature-insensitive self-recharging circuitry used in DRAMs," IEEE Trans. on Very Large Scale Integration (VLSI) Systems, vol. 13, no. 3, pp. 405-408, March 2005.
-
(2005)
IEEE Trans. on Very Large Scale Integration (VLSI) Systems
, vol.13
, Issue.3
, pp. 405-408
-
-
Wang, C.-C.1
Tseng, Y.-L.2
Chiu, C.-C.3
|