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Volumn 93, Issue 2, 2008, Pages 477-481

Deposition and stoichiometry control of Nd-doped gadolinium gallium garnet thin films by combinatorial pulsed laser deposition using two targets of Nd:Gd3Ga5O12 and Ga2O3

Author keywords

[No Author keywords available]

Indexed keywords

GADOLINIUM; GALLIUM; GARNETS; NEODYMIUM; PULSED LASER DEPOSITION; SILICATE MINERALS; STOICHIOMETRY; THICK FILMS;

EID: 51649095831     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4810-x     Document Type: Article
Times cited : (15)

References (28)
  • 24
    • 0030082482 scopus 로고    scopus 로고
    • Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation
    • A. Masuda, K. Matsuda, Y. Yonezawa, A. Morimoto, T. Shimizu, Mechanism of stoichiometric deposition of volatile elements in multimetal-oxide films prepared by pulsed laser ablation. Jpn J. Appl. Phys. Part 2: Lett. 35, L237-L240 (1996)
    • (1996) Jpn J. Appl. Phys. Part 2: Lett. , vol.35
    • Masuda, A.1    Matsuda, K.2    Yonezawa, Y.3    Morimoto, A.4    Shimizu, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.