Germanium: The semiconductor comeback material

IEEE Potentials

Volumn 26, Issue 2, 2007, Pages 34-38

  Todi, Ravi M ^a   Heyns, Marc M ^a  

^a IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; HOLE MOBILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

HIGH-MOBILITY MATERIALS; PERFORMANCE IMPROVEMENT; SILICON MOBILITY;

GERMANIUM;

EID: 34147182209     PISSN: 02786648     EISSN: None     Source Type: Journal    
DOI: 10.1109/MP.2007.343055     Document Type: Review

References (10)

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