Lateral averaging effects on surface potential measurements on InAs dots studied by kelvin probe force microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 B, 2004, Pages 4639-4642

  Ono, Shiano ^a   Takahashi, Takuji ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Electrostatic force; InAs quantum dots (QDs); Potential contrast; Size dependence; Two dimensional simulation

Indexed keywords

CANTILEVER BEAMS; COATINGS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; PLATINUM; RESONANCE; SEMICONDUCTOR QUANTUM DOTS; SURFACE TOPOGRAPHY; VACUUM;

ELECTROSTATIC FORCE; INAS QUANTUM DOTS (QD); POTENTIAL CONTRAST; SIZE DEPENDENCE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 5144221166     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4639     Document Type: Conference Paper

References (6)

1. M. Nonnenmacher, M. P. O'Boyle and H. K. Wickramasinghe: Appl. Phys. Lett. 58 (1991) 2921.
2. S. Ono, M. Takeuchi, T. Noda and T. Takahashi: Jpn. J. Appl. Phys. 42 (2003) 4869.
3. T. Takahashi and S. Ono: to be published in Ultramicroscopy.
4. T. Takahashi and T. Kawamukai: Ultramicroscopy 82 (2000) 63.
5. K. Kajiyama, Y. Mizushima and S. Sakata: Appl. Phys. Lett. 23 (1973) 458.
6. H.-U. Baier, L. Koenders and W. Mönch: J. Vac. Sci. & Technol. B 4 (1986) 1095.