A structural and compositional analysis of a TiOx diffusion barrier for indium Tin Oxide/Si contacts

Metals and Materials International

Volumn 14, Issue 4, 2008, Pages 481-485

  Ok, Young Woo ^a   Park, Won Kyu ^b   Kim, Hyun Mi ^c   Kim, Ki Bum ^c   Kim, Donghwan ^a  

^a Korea University   (South Korea)

^b Korea Advanced Nano Fab Center (KANC)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

Diffusion barrier; Interfacial reaction; ITO Si reaction; Ti oxide

Indexed keywords

DEPOSITION; DIFFUSION BARRIERS; OPTICAL PROPERTIES; OXIDE MINERALS; SURFACE CHEMISTRY; TIN OXIDES; TITANIUM DIOXIDE;

COMPOSITIONAL ANALYSIS; COMPOSITIONAL CHANGES; DIFFUSION BARRIER LAYERS; ELECTRICAL AND OPTICAL PROPERTIES; INDIUM TIN OXIDE; ITO/SI REACTION; OXIDATION CONDITIONS; TI OXIDES;

SILICON COMPOUNDS;

EID: 51349168148     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.3365/met.mat.2008.08.481     Document Type: Article

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