Evaluation of n+a-Si contact with indium tin oxide by X-ray photoclectron spectroscopy valence band measurement

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 9 A, 1999, Pages 5232-5235

  Yabuhara, Hidehiko ^a   Kataoka, Yoshinori ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

a Si TFT LCD. ITO; Contact resistance; SIMS; Valence band; XPS

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BAND STRUCTURE; BINDING ENERGY; ELECTRIC RESISTANCE; INTERFACES (MATERIALS); LIQUID CRYSTAL DISPLAYS; PHOSPHORUS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY; VALENCE BAND ANALYSIS;

ELECTRIC CONTACTS;

EID: 0033353362     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.5232     Document Type: Article

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