InGaN light emitters: A comparison of quantum dot and quantum well based devices

2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Volumn , Issue , 2008, Pages

  Wu, Yuh Renn ^a   Lin, Yih Yin ^b   Singh, Jasprit ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRO-OPTICS; INGAN QUANTUM DOTS; QUANTUM-DOT DEVICES;

BAND STRUCTURE; ELECTROMAGNETIC WAVES; ELECTRON OPTICS; LASERS; LIGHT; LIGHT EMISSION; MODEL STRUCTURES; OPTICAL WAVEGUIDES; QUANTUM ELECTRONICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 51349085934     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/CLEO.2008.4552075     Document Type: Conference Paper

References (4)

1. T. Mattila and A. Zunger, "Predicted bond length variation in wurtzite and zinc-blende InGaN and AlGaN alloys," J. Appl. Phys., vol. 85, no. 1, pp. 160-167, Jan 1999.
2. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. J. Ploog, "Electronic band structure of wurtzite gan under biaxial strain in the m plane investigated with photoreflectance spectroscopy," Physical Review B, vol. 65, p. 075202, 2002.
3. Y.-R. Wu, M. Singh, and J. Singh, "Gate leakage suppression and contact engineering in nitride heterostructures," J. Appl. Phys., vol. 94, no. 9, pp. 5826-5831, November 2003.
4. O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stuzmann, F. Bernardim, V. Fiorentini, V. Tilak, B. Schaff, and L. F. Eastman, "Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures," J. Phys.: Condens. Matter, vol. 14, pp. 3399-3434, 2002.