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Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7921-7924

Surface modification by vacuum annealing for field emission from heavily phosphorus-doped homoepitaxial (1 1 1) diamond

(4) Yamada, Takatoshi a Nebel, Christoph E a Somu, Kumaragurubaran a Shikata, Shin ichi a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Electron affinity; Field emission; Phosphorus doped diamond; Surface modification; Vacuum annealing

Indexed keywords

ANNEALING; CHEMICAL BONDS; DIAMONDS; ELECTRON AFFINITY; FIELD EMISSION; HYDROGEN; PHOSPHORUS; SURFACE TREATMENT; THRESHOLD VOLTAGE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING TEMPERATURES; DEVICE APPLICATION; EMISSION THRESHOLD; FIELD EMISSION PROPERTY; HYDROGEN PLASMAS; OXIDIZED SURFACES; PHOSPHORUS-DOPED DIAMOND; VACUUM-ANNEALING;

CORE LEVELS;

EID: 51249112774 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.03.156 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.