Study of buried Si(1 1 1)-5 × 2-Au by surface X-ray diffraction

Applied Surface Science

Volumn 254, Issue 23, 2008, Pages 7803-7806

  Iwasawa, Yusaku ^a   Voegeli, Wolfgang ^a   Shirasawa, Tetsuroh ^a   Sekiguchi, Kouji ^a   Nojima, Takehiro ^a   Yoshida, Ryuji ^a   Takahashi, Toshio ^a   Matsumoto, Masuaki ^b   Okano, Tatsuo ^b   Akimoto, Koichi ^c   Kawata, Hiroshi ^d   Sugiyama, Hiroshi ^d  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c NAGOYA UNIVERSITY   (Japan)

^d HIGH ENERGY ACCELERATOR RESEARCH ORGANIZATION KEK   (Japan)

Author keywords

Buried interface; Si(1 1 1) 5 2 Au; Surface X ray diffraction

Indexed keywords

AMORPHOUS SILICON;

AMORPHOUS SI; BURIED INTERFACE; FRACTIONAL ORDER; IN-PLANE MEASUREMENTS; INTENSITY VARIATIONS; SI (1 1 1); STRUCTURAL PERIODICITY; SURFACE X-RAY DIFFRACTION;

X RAY DIFFRACTION;

EID: 51249087097     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.129     Document Type: Article

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