Demonstration of ultraviolet 6H-SiC PIN avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 18, Issue 23, 2006, Pages 2508-2510

  Liu, Han Din ^a   Guo, Xiangyi ^a   McIntosh, Dion ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

Avalanche photodiode (APD); Impact ionization; Photodetector; Silicon carbide; Ultraviolet (UV)

Indexed keywords

CURRENT DENSITY; ELECTRIC PROPERTIES; IMPACT IONIZATION; OPTICAL GAIN; OPTICAL PROPERTIES; PHOTODETECTORS; ULTRAVIOLET DETECTORS;

ELECTROOPTICAL CHARACTERISTIC; MESA-STRUCTURE AVALANCHE PHOTODIODES; ULTRAVIOLET AVALANCHE PHOTODIODES;

AVALANCHE PHOTODIODES;

EID: 33947255045     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.887211     Document Type: Article

References (13)

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