Effect of a site substitution on the properties of CaBi2Nb 2O9 ferroelectric ceramics

Journal of the American Ceramic Society

Volumn 91, Issue 9, 2008, Pages 2928-2932

  Zhang, Xiaodong ^a   Yan, Haixue ^a   Reece, Michael J ^a,b  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SITE SUBSTITUTIONS; DC-RESISTIVITY; DEPOLING; HIGH TEMPERATURES;

PIEZOELECTRICITY;

EID: 51149084766     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/j.1551-2916.2008.02564.x     Document Type: Article

References (22)

1. R. C. Turner, P. A. Fuierer, R. E. Newnham T. R. Shrout Materials for High-Temperature Acoustic and Vibration Sensors - A Review Appl. Acoust., 41 [4] 299 324 (1994).
2. D. Damjanovic Materials for High Temperature Piezoelectric Transducers Curr. Opin. Solid State Mater. Sci., 3 [5] 469 73 (1998).
3. J. Hornsteiner, E. Born E. Riha Langasite for High Temperature Surface Acoustic Wave Applications Phys. Status Solidi A - Appl. Res., 163 [1] R3 4 (1997).
4. 7 (A=Sr, B=Ta, Nb) Crystals and Their Solid-Solutions J. Phys. Soc. Jpn., 38 [3] 817 24 (1975).
5. J. K. Yamamoto A. S. Bhalla Piezoelectric properties of layered perovskite A{2}Ti{-2}O{-7} (A=lanthanum and neodymium) Single-Crystal fibers J. Appl. Phys., 70 [8] 4469 71 (1991).
6. H. S. Shulman, D. Damjanovic N. Setter Niobium Doping and Dielectric Anomalies in Bismuth Titanate J. Am. Ceram. Soc., 83 [3] 528 32 (2000).
7. C. Dearaujo, J. D. Cuchiaro, L. D. Cmillan, M. C. Scott J. F. Scott Fatigue-Free Ferroelectric Capacitors with Platinum-Electrodes Nature, 374 [6523] 627 9 (1995).
8. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee W. Jo Lanthanum-Substituted Bismuth Titanate for Use in Non-Volatile Memories Nature, 401 [6754] 682 4 (1999).
9. 9)(1-x) Aurivillius Type Structure Piezoelectric Ceramics Obtained from Mechanochemically Activated Oxides Acta Mater., 48 [9] 2421 8 (2000).
10. S. H. Hong, S. Trolier-Mckinstry G. L. Messing Dielectric and Electromechanical Properties of Textured Niobium-Doped Bismuth Titanate Ceramics J. Am. Ceram. Soc., 83 [1] 113 8 (2000).
11. 9 Ferroelectrics J. Appl. Phys., 90 [10] 5296 302 (2001).
12. 9 Adv. Mater., 17 [10] 1261 5 (2005).
13. R. E. Newnham, R. W. Wolfe J. F. Dorrian Structural Basis of Ferroelectricity in Bismuth Titanate Family Mater. Res. Bull., 6 [10] 1029 40 (1971).
14. 12 Eitaxial Thin Films Grown By Metalorganic Chemical Vapor Deposition Appl. Phys. Lett., 80 [15] 2746 8 (2002).
15. 12 Epitaxial Thin Films Grown By Metalorganic Chemical Vapor Deposition J. Appl. Phys., 93 [3] 1707 12 (2003).
16. E. C. Subbarao A Family of Ferroelectric Bismuth Compounds J. Phys. Chem. Solids, 23 [6] 665 76 (1962).
17. 15 Solid-Solution J. Appl. Phys., 55 [4] 1092 9 (1984).
18. 9 Ceramics J. Eur. Ceram. Soc, 26, 2785 92 (2006).
19. c in Aurivillius Compounds J. Mater. Res., 16 [11] 3139 49 (2001).
20. B. Jiménez, R. Jiménez, A. Castro, P. Millán L. Pardo Dielectric and Mechanoelastic Relaxations Due to Point Defects in Layered Bismuth Titanate Ceramics J. Phys.: Condens. Matter, 13 [33] 7315 26 (2001).
21. 12 Ferroelectric Ceramics J. Appl. Phys., 100 [7] 076103 3 (2006).
22. c Aurivillius Phase Ferroelectric Ceramics Appl. Phys. Lett., 87, 082911 3 (2005).