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Volumn 69, Issue 9, 2008, Pages 2255-2260

Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils

Author keywords

C. High pressure; C. X ray diffraction; D. Phase equilibria; D. Phase transitions

Indexed keywords

DIAMONDS; DIFFRACTION; ELECTRIC RESISTANCE; GERMANIUM; MELTING POINT; MINERALS; PHASE TRANSITIONS; SILICON; SINTERING; TIN; TITANIUM COMPOUNDS; TOOLS;

EID: 50949132861     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2008.04.025     Document Type: Article
Times cited : (47)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.