Temperature-pressure phase diagram of silicon determined by Clapeyron equation

Solid State Communications

Volumn 129, Issue 7, 2004, Pages 437-441

  Yang, C C ^a   Li, J C ^a   Jiang, Q ^a  

^a Jilin University   (China)

Author keywords

A. Semiconductors; D. Phase transitions; D. Surface stress

Indexed keywords

APPROXIMATION THEORY; COMPRESSIBILITY; ENTHALPY; FUNCTIONS; PHASE EQUILIBRIA; PHASE TRANSITIONS; PRESSURE EFFECTS; STRESS ANALYSIS; THERMODYNAMICS;

CLAPEYRON EQUATION; MOLAR TRANSITION; SURFACE STRESS;

PHASE DIAGRAMS;

EID: 0346093753     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.11.020     Document Type: Article

References (35)

1. Piltz R.O., Maclean J.R., Clark S.J., Ackland G.J., Hatton P.D., Crain J. Phys. Rev. B. 52:1995;4072.
2. Ramachandran G.K., McMillan P.F., Deb S.K., Somayazulu M., Gryko J., Dong J., Sankey O.F. J. Phys: Condens. Matter. 12:2000;4013.
3. Kamalakaran R., Singh A.K., Srivastava O.N. J. Phys: Condens. Matter. 12:2000;2681.
4. Blanco A., Chomski E., Grabtchak S., Ibisate M., John S., Leonard S.W., Lopez C., Meseguer F., Miguez H., Mondia J.P., Ozin G.A., Toader O., van Driel H.M. Nature. 405:2000;437.
5. Kodiyalam S., Kalia R.K., Kikuchi H., Nakano A., Shimojo F., Vashishta P. Phys. Rev. Lett. 86:2001;55.
6. Jamieson J.C. Science. 139:1963;762.
7. Jayaraman A., Klement, Jr W., Kennedy G.C. Phys. Rev. 130:1963;540.
8. Bundy F.P. J. Chem. Phys. 41:1964;3809.
9. Lees J., Williamson B.H.J. Nature. 208:1965;278.
10. van Vechten J.A. Phys. Rev. B. 7:1973;1479.
11. Cannon J.F. J. Phys. Chem. Ref. Data. 3:1974;781.
12. Yin M.T., Cohen M.L. Phys. Rev. B. 26:1982;5668.
13. Needs R.J., Martin R.M. Phys. Rev. B. 30:1984;5390.
14. Hu J.Z., Spain I.L. Solid State Commun. 51:1984;263.
15. Chang K.J., Cohen M.L. Phys. Rev. B. 31:1985;7819.
16. Hu J.Z., Merkle L.D., Menoni C.S., Spain I.L. Phys. Rev. B. 34:1986;4679.
17. McMahon M.I., Nelmes R.J. Phys. Rev. B. 47:1993;8337.
18. Tolbert S.H., Herhold A.B., Brus L.E., Alivisatos A.P. Phys. Rev. Lett. 76:1996;4384.
19. Gaál-Nagy K., Bauer A., Schmitt M., Karch K., Pavone P., Strauch D. Phys. Stat. Sol. (b). 211:1999;275.
20. Gaál-Nagy K., Schmitt M., Pavone P., Strauch D. Comput. Mater. Sci. 22:2001;49.
21. Deb S.K., Wilding M., Somayazulu M., McMillan P.F. Nature. 414:2001;528.
22. McMillan P.F. Nat. Mater. 1:2002;19.
23. Mujica A., Rubio A., Muñoz A., Needs R.J. Rev. Mod. Phys. 75:2003;863.
24. Lobo L.Q., Ferreira A.G.M. J. Chem. Thermodyn. 33:2001;1597.
25. Jiang Q., Liang L.H., Zhao D.S. J. Phys. Chem. B. 105:2001;6275.
26. Hoffman J.D. J. Chem. Phys. 29:1958;1192.
27. Kauzmann W. Chem. Rev. 43:1948;219.
28. Yang C.C., Li J.C., Jiang Q. Chem. Phys. Lett. 372:2003;156.
29. Yang C.C., Li G., Jiang Q. J. Phys: Condens. Matter. 15:2003;4961.
30. Jiang Q., Li J.C., Tong J. Mat. Sci. Engng A. 196:1995;165.
31. Sargent-Welch Scientific Company, Table of Periodic Properties of the Elements, Skokie, IL, 1980, pp. 1-2.
32. Weast R.C. CRC Handbook of Chemistry and Physics. 69th ed. 1988-1989;CRC Press, Boca Raton, FL. pp. E-104, B-219, F-12 and B-188.
33. Soler J.M., Beltrán M.R., Michaelian K., Garzón I.L., Ordejón P., Sánchez-Portal D., Artacho E. Phys. Rev. B. 61:2000;5771.
34. Regel' A.R., Glazov V.M. Semiconductors. 29:1995;405.
35. Rhim W., Ohsaka K. J. Cryst. Growth. 208:2000;313.