Comparative analysis of hot-phonon effects in nitride and arsenide channels for HEMTs

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2004, Pages 145-146

  Matulionis, A ^a  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIDE CHANNELS; ELECTRON TEMPERATURE; HOT-PHONON EFFECTS; NITRIDE TRANSISTORS;

ALUMINUM COMPOUNDS; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON GAS; MICROWAVES; MILLIMETER WAVES; MONTE CARLO METHODS; NITRIDES; PHONONS; VELOCITY MEASUREMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 17444406054     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2004.1367827     Document Type: Conference Paper

References (9)

1. A. Vertiatchikh, H. Kim, W. J. Schaff, L. F. Eastman, R. Thompson, V. Kaper, R. Shealy, in Proc. 27th WOCSDICE, (Fuerigen, Switzerland), 41-42 (2003).
2. T.-H. Yu and K. Brennan, J. Appl. Phys. 91, 3730-3736 (2002).
3. M. Wraback, H. Shen, J. C. Carrano, C. J. Collins, J. C. Campbell, R. D. Dupuis, M. J. Schuman, I. T. Ferguson, Appl. Phys. Lett. 79, 1303-1305 (2001).
4. L. Ardaravicius, M. Ramonas, O. Kiprijanovic, J. Liberis, A. Matulionis, L. F. Eastman, J. R. Shealy, X. Chen, Y. Sun, Abstract submitted to IWN 2004, Pittsburgh, July 18-23, 2004.
5. A. Matulionis, J. Liberis, M.Ramonas, I. Matulioniene, L. F. Eastman, A. Vertiatchikh, X. Chen, Y. Sun, Abstract submitted to IWN 2004, Pittsburgh, July 18-23, 2004.
6. A. Matulionis, J. Liberis, and I. Matulionienė, M. Ramonas, L. F. Eastman, J. R. Shealy, V. Tilak, A. Vertiatchikh, Phys. Rev. B, 68, 036338 1-7 (2003).
7. V. Aninkevicius, I, Matulioniene, A. Matulionis, private communication.
8. M. Ramonas, A.Matulionis, L.Rota, Semicond. Sci. Technol. 18, 118-123 (2003).
9. M. Ramonas, A.Matulionis, Semicond. Sci. Technol. 19, (2003).