Cryogenic transimpedance amplifier for micromechanical capacitive sensors

Review of Scientific Instruments

Volumn 79, Issue 8, 2008, Pages

  Antonio, D ^a,c   Pastoriza, H ^a,c   Julian P ^b,c   Mandolesi, P ^b,d  

^a CENTRO ATÓMICO BARILOCHE   (Argentina)

^b UNIVERSIDAD NACIONAL DEL SUR   (Argentina)

^c Consejo Nacional de Investigaciones Científicas y T́cnicas ^*  (Argentina)

^d Centro Científico y Tecnológico Consejo Nacional de Investigaciones Científicas y Técnicas   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CRYOGENICS; DIFFERENTIAL AMPLIFIERS; ELECTRIC CONDUCTIVITY; LOGIC CIRCUITS; METALLIC COMPOUNDS; MOS DEVICES; NANOSTRUCTURED MATERIALS; POLYSILICON; SEMICONDUCTOR MATERIALS;

MICRO-MECHANICAL; TRANS-IMPEDANCE AMPLIFIER;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 50849114159     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2970944     Document Type: Article

References (23)

1. A. K. Geim, I. V. Grigorieva, S. V. Dubonos, J. G. S. Lok, J. C. Maan, A. Filippov, and F. Peeters, Nature (London) 0028-0836 10.1038/36797 390, 259 (1997).
2. C. A. Bolle, V. Aksyuk, F. Pardo, P. L. Gammel, E. Zeldov, E. Bucher, R. Boie, D. J. Bishop, and D. R. Nelson, Nature (London) 0028-0836 10.1038/19924 399, 43 (1999).
3. V. A. Schweigert, F. M. Peeters, and P. S. Deo, Nature (London) 81, 2783 (1998). 0028-0836
4. A. R. de C. Romaguera, M. M. Doria, and F. M. Peeters, Phys. Rev. B 0163-1829 10.1103/PhysRevB.76.020505 76, 020505 (2007).
5. I. V. Grigorieva, W. Escoffier, J. Richardson, L. Y. Vinnikov, S. Dubonos, and V. Oboznov, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96. 077005 96, 077005 (2006).
6. M. Dolz, D. Antonio, and H. Pastoriza, Physica B (Amsterdam) 398, 329 (2007). 0921-4526
7. S. D. Senturia, Microsystem Design (Kluwer, Dordrecht, 2001).
8. N. Yazdi, H. Kulah, and K. Najafi, Third IEEE International Conference on Sensors, Vienna, Austria, 2004 (unpublished), pp. 28-31.
9. B. E. Boser, Transducers '97, 1997 International Conference on Solid State Sensors and Actuators, Chicago, 1997 (unpublished), pp. 1169-1172.
10. P. Horowitz and W. Hill, The Art of Electronics, 2nd ed. (Cambridge University Press, Cambridge, England, 1989).
11. R. Kirschman, Cryogenics 0011-2275 10.1016/0011-2275(85)90036-0 25, 115 (1985).
12. F. Balestra and G. Ghibaudo, Device and Circuit Cryogenic Operation for Low Temperature Electronics (Kluwer, Dordrecht, 2001).
13. J. T. Hastings and K. W. Ng, Rev. Sci. Instrum. 0034-6748 10.1063/1.1145422 66, 3691 (1995).
14. EECS Department of the University of California, The SPICE page (http://bwrc.eecs.berkeley.edu/Classes/icbook/SPICE/).
15. G. K. Wong, in Experimental Techniques in Condensed Matter Physics at Low Temperatures, Frontiers in Physics, edited by, R. C. Richardson, and, E. N. Smith, (Addison-Wesley, Reading, MA, 1988), Chap..
16. H. C. Nathanson, W. E. Nevel, R. A. Wickstrom, and J. R. Davis, Jr., IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1967.15912 14, 117 (1967).
17. P. Allen and D. Holberg, CMOS Analog Circuit Design (Oxford University Press, Oxford, 1987).
18. S. K. Tewksbury, IEEE Trans. Electron Devices 28, 1519 (1981).
19. R. Wang, J. Dunkley, T. A. DeMassa, and L. F. Jelsma, IEEE Trans. Electron Devices 18, 386 (1971).
20. B. Razavi, Design of Analog CMOS Integrated Circuits (McGraw-Hill, New York, 2001).
21. H. Nagata, H. Shibai, T. Hirao, T. Watabe, M. Noda, Y. Hibi, M. Kawada, and T. Nakagawa, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2003.821764 51, 270 (2004).
22. S. Liu, J. Kramer, G. Indiveri, T. Delbrück, and R. Douglas, Analog VLSI: Circuits and Principles (MIT, Cambridge, MA, 2002).
23. S. Sesnic and G. Craig, IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1972.17522 19, 933 (1972).