SCOPUS 정보 검색 플랫폼

Volumn 21, Issue 4, 2008, Pages 469-474

EUV resist outgassing: Quantification and Release Mechanisms

Author keywords

Accumulation method; EUV resist outgassing; Pressure rise method; QMS; Quantification

Indexed keywords

EID: 50849107719 PISSN: 09149244 EISSN: 13496336 Source Type: Journal
DOI: 10.2494/photopolymer.21.469 Document Type: Article

Times cited : (10)

References (5)

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- Dean, K.¹ Nishiyama, I.² Oizumi, H.³ Keen, A.⁴ Cao, H.⁵ Yueh, W.⁶ Watanabe, T.⁷ Lacovig, P.⁸ Rumiz, L.⁹ Denbeaux, G.¹⁰ Simon, J.¹¹

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- S. Kobayashi, J. J. Santillan, and T. Itani, Proc. SPIE 6923 (2008) 692345-1.
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- Kobayashi, S.¹ Santillan, J.J.² Itani, T.³

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- J. J. Santillan, S. Kobayashi, and T. Itani, Proc. SPIE 6923 (2008) 692342-1
- (2008) Proc. SPIE , vol.6923 , pp. 692342-692351
- Santillan, J.J.¹ Kobayashi, S.² Itani, T.³

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- J. J. Santillan, M. Toriumi, and T. Itani, Proc. SPIE 6519 (2007) 651944-1.
- (2007) Proc. SPIE , vol.6519 , pp. 651944-651951
- Santillan, J.J.¹ Toriumi, M.² Itani, T.³

5
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- The International Technology Roadmap for Semiconductors 2007 edition, http://www.itrs.net/Links/2007ITRS/Home2007.htm.
- The International Technology Roadmap for Semiconductors 2007 edition, http://www.itrs.net/Links/2007ITRS/Home2007.htm.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.