Amorphous silicon thin-film transistors gated through an electrolyte solution

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1030-1033

  Gonçlves, Dina ^a,b   Prazeres, Duarte M F ^b   Chu, Virginia ^a   Conde, João Pedro ^a,b  

^a INESC   (Portugal)

^b INSTITUTO SUPERIOR TÉCNICO   (Portugal)

Author keywords

Amorphous materials; Sensitivity; Silicon; Surface treatment; Thin film transistors (TFTs)

Indexed keywords

ELECTROLYSIS; ELECTROLYTES; METALLIC GLASS; NITRIDES; PASSIVATION; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SILICON; SILICON NITRIDE; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS MATERIALS; SENSITIVITY; SILICON THIN FILMS; SURFACE TREATMENT; THIN-FILM TRANSISTORS (TFTS);

AMORPHOUS SILICON;

EID: 50649118865     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001406     Document Type: Article

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