AlGaN/GaN heterostructure field effect transistors for high temperature hydrogen sensing with enhanced sensitivity

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 835-838

  Song, Junghui ^a   Lu, Wu ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; GALLIUM NITRIDE; HYDROGEN; NONMETALS; TRANSISTORS;

ALGAN/GAN HETEROSTRUCTURE; ENHANCED SENSITIVITY; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; HIGH TEMPERATURE; HIGH TEMPERATURES; HYDROGEN SENSING;

FIELD EFFECT TRANSISTORS;

EID: 50249181116     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4419078     Document Type: Conference Paper

References (6)

1. Z. Lin, W. Lu, J. Lee, D. Liu, J. S. Flynn, and G. R. Brandes, "Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: determination and effect of metal work functions," Appl. Phys. Lett., vol. 82, pp. 4364-4366, 2003.
2. J. Song, W. Lu, J. Flynn, and G. Brandes, "Pt-AlGaN/GaN Schottky diodes operated at 800°C for hydrogen sensing," Appl. Phys. Lett., vol. 87, pp. 133501-133503, 2005.
3. J. Song, W. Lu, J. S. Flynn, and G. R. Brandes, "AlGaN/GaN Schottky diode hydrogen sensor performance at high temperatures with different catalytic metals," Solid State Electronics, vol. 49, 1330-1334, 2005.
4. Y. K. Fang, S. B. Hwang, C. Y. Lin, and C. C. Lee, "Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor," Appl. Phys. Lett., vol. 57, pp. 2686-2688, 1990.
5. B. Pennemann, K. Oster, and K. Wandelt, "Hydrogen adsorption on Pt(100) at low temperatures: work function and thermal desorption data," Surf. Sci., vol. 249, pp. 35-43, 1991.
6. R. Dus, "Hydrogen adsorption and absorption on evaporated paladium films," Surf. Sci., vol. 42, pp. 324-328, 1973.