Selective oxidation fin channel MOSFET for source/drain series resistance reduction

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Volumn 1, Issue , 2006, Pages 420-421

  Cho, Young Kyun ^a   Roh, Tae Moon ^a   Kim, Jongdae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

FinFET; Recess channel; Series resistance; SoxFET

Indexed keywords

CHEMICAL OXYGEN DEMAND; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; NANOTECHNOLOGY; OPTICAL DESIGN; OXIDATION; TECHNOLOGY; THREE DIMENSIONAL;

DRIVE CURRENTS; ELECTRICAL CHARACTERISTICS; FIN FIELD-EFFECT TRANSISTOR; FINFET; LINEAR TRANSCONDUCTANCE; PROCESS STEPS; RECESS CHANNEL; SCALING-DOWN; SELECTIVE OXIDATION; SERIES RESISTANCE; SOURCE/DRAIN EXTENSION; SOURCE/DRAIN SERIES RESISTANCE; SOXFET; THREE DIMENSIONAL DEVICE SIMULATIONS;

FINS (HEAT EXCHANGE);

EID: 50249133064     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2006.4388796     Document Type: Conference Paper

References (6)

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