High index resist for 193 nm immersion lithography

Macromolecules

Volumn 41, Issue 15, 2008, Pages 5674-5680

  Matsumoto, Kazuya ^a   Costner, Elizabeth A ^b   Nishimura, Isao ^b   Ueda, Mitsuru ^a   Willson, C Grant ^b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

193NM IMMERSION LITHOGRAPHY; ABSORBANCE; FLUID MEDIUM; FUTURE GENERATIONS; HIGH REFRACTIVE INDEX; HIGH-INDEX; IMAGING PROCESSING; IMMERSION FLUIDS; IMMERSION LITHOGRAPHY; LEADING EDGES; REFRACTIVE INDICES; RESIST MATERIALS; RESIST POLYMERS; SEMICONDUCTOR PRODUCTS; SULFUR ATOMS; THIO ESTER;

LIGHT REFRACTION; MONOMERS; OPTICAL PROPERTIES; PHOTOLITHOGRAPHY; POLYMERS; REFRACTIVE INDEX; REFRACTOMETERS; SULFUR;

ORGANIC POLYMERS;

EID: 50249132544     PISSN: 00249297     EISSN: None     Source Type: Journal    
DOI: 10.1021/ma800295s     Document Type: Article

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