Dynamics of the profile charging during SiO2 etching in plasma for high aspect ratio trenches

IEEE Transactions on Plasma Science

Volumn 36, Issue 4 PART 1, 2008, Pages 874-875

  Radjenović, Branislav M ^a   Radmilović Radjenović, Marija D ^a   Petrović, Zoran Lj ^a  

^a UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

High aspect ratio trenches; Level set method; Plasma etching; Profile charging

Indexed keywords

ASPECT RATIO; ELECTRIC FIELDS; ELECTROMAGNETIC FIELD THEORY; ELECTROMAGNETIC FIELDS; ETCHING; MANAGEMENT SCIENCE; MATHEMATICAL MODELS; MONTE CARLO METHODS; PHOTORESISTS; PLASMA ETCHING; PLASMAS; POISSON EQUATION; SILICON COMPOUNDS; THREE DIMENSIONAL;

ELECTRON FLUXES; FINITE ELEMENT METHOD FEM; HIGH ASPECT RATIO; HIGH ASPECT RATIO TRENCHES; LEVEL SET METHOD; PLASMA SCIENCE; POTEN TIAL PROFILE; PROFILE CHARGING;

FINITE ELEMENT METHOD;

EID: 50249120526     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2008.920886     Document Type: Article

References (6)

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