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Volumn , Issue , 2006, Pages

High-current photodetectors as efficient and high-power RF output stages

Author keywords

High power photodetectors; Photodetectors; Photodiodes; Saturation current; Space charge effect

Indexed keywords

MICROWAVES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTONICS; POWER AMPLIFIERS;

EID: 50049133878     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWP.2006.346563     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 1
    • 4544370765 scopus 로고    scopus 로고
    • A Comparison of Front- and Backside-Illuminated High-Saturation power Partially Depleted Absorber Photodetectors
    • X. Li, N. Li. S. Demiguel, J.C. Campbell, D. Tulchinsky, and K.J. Williams. "A Comparison of Front- and Backside-Illuminated High-Saturation power Partially Depleted Absorber Photodetectors," IEEE J. of Quantum Elec., Vol. 40, No. 9, pp. 1321-5, 2004.
    • (2004) IEEE J. of Quantum Elec , vol.40 , Issue.9 , pp. 1321-1325
    • Li, X.1    Demiguel, N.L.S.2    Campbell, J.C.3    Tulchinsky, D.4    Williams, K.J.5
  • 2
    • 0033347994 scopus 로고    scopus 로고
    • Design Considerations for High-Current Photodetectors
    • Keith J. Williams, Ronald D. Esman, "Design Considerations for High-Current Photodetectors", IEEE Lightwave Technology, Vol. 17, No. 8, pp1443-1454, 1999.
    • (1999) IEEE Lightwave Technology , vol.17 , Issue.8 , pp. 1443-1454
    • Williams, K.J.1    Esman, R.D.2
  • 3
    • 0034481324 scopus 로고    scopus 로고
    • M.S. Islam, A. Nespola, M. Yeahia, M.C. Wu. D. L. Sivco, and A.Y. Cho, Con-elation Between the Failure Mechanism and Dark Currents of High Power Photodetectors, Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE, 1, pp 82-83, 2000.
    • M.S. Islam, A. Nespola, M. Yeahia, M.C. Wu. D. L. Sivco, and A.Y. Cho, "Con-elation Between the Failure Mechanism and Dark Currents of High Power Photodetectors", Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE, vol.1, pp 82-83, 2000.
  • 5
    • 0032025527 scopus 로고    scopus 로고
    • InP-InGaAs Uni-Traveling-Carrier Photodiode with Improved 3-dB Bandwidth of Over 150GHz
    • Naofumi Shimizu, N. Watanabe, T. Furuta, Tadao Ishibashi, "InP-InGaAs Uni-Traveling-Carrier Photodiode with Improved 3-dB Bandwidth of Over 150GHz", IEEE Photonics Technology Letters, Vol. 10, No. 3, pp412-414, 1998.
    • (1998) IEEE Photonics Technology Letters , vol.10 , Issue.3 , pp. 412-414
    • Naofumi Shimizu, N.1    Watanabe, T.2    Furuta, T.I.3
  • 6
    • 0030214626 scopus 로고    scopus 로고
    • Ultrafast, Dual-Depletion Region InGaAs/InP pin Detector
    • Frank, J. Effenberger, Abhay M. Joshi, "Ultrafast, Dual-Depletion Region InGaAs/InP pin Detector", IEEE Lightwave Technology, Vol. 14, No. 8, pp1859-1864, 1996.
    • (1996) IEEE Lightwave Technology , vol.14 , Issue.8 , pp. 1859-1864
    • Frank, J.E.1    Joshi, A.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.