A Si stencil mask for deep X-ray lithography fabricated by MEMS technology

Microsystem Technologies

Volumn 14, Issue 9-11, 2008, Pages 1335-1342

  Mekaru, Harutaka ^a   Takano, Takayuki ^a   Ukita, Yoshiaki ^b   Utsumi, Yuichi ^b   Takahashi, Masaharu ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; COMPOSITE MICROMECHANICS; EXPERIMENTS; LITHOGRAPHY; MEMS; MICROELECTROMECHANICAL DEVICES; NONMETALS; OPTICAL DESIGN; PHOTORESISTS; SILICON; TECHNOLOGY; X RAY LITHOGRAPHY;

ADVANCED SCIENCE; BEAM LINES; DEEP X-RAY LITHOGRAPHY; HYDROFLUOROETHER; LINE WIDTHS; LINE/SPACE PATTERNING; MEMS FABRICATION; MEMS TECHNOLOGY; SI-WAFER; STENCIL MASKS; X-RAY EXPOSURE;

SILICON WAFERS;

ABSORBERS; ETCHING; ETHERS; EXPERIMENTATION; GOLD; LITHOGRAPHY; NONMETALS; OPTICAL INSTRUMENTS; POLYIMIDES; SILICON;

EID: 49949119431     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-007-0513-z     Document Type: Conference Paper

References (5)

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2. Henke LB, Gullikson ME, Davis CJ (1993) X-Ray interactions: photoabsorption, scattering, transmission, and reflection at E = 50-30,000 eV, Z = 1-92. Atomic Data Nuclear Data Tables 54(2):181-342
3. Lärmer F, Schilp A (1992) Method of anisotropically etching silicon. U.S. Patent No. 5501893, German Patent DE4241045
4. Mekaru H, Takano T, Awazu K, Maeda R (2006) Fabrication of a Si stencil mask for the X-ray lithography using a dry etching technique. IOP J Phys Conf Series 34:859-864
5. Utsumi Y, Kishimoto T (2005) Large area and wide dimension range x-ray lithography for lithographite, galvanoformung, and abformung process using energy variable synchrotron radiation. J Vac Sci Technol B 23(6):2903-2909