Fabrication of a Si stencil mask for the X-ray lithography using a dry etching technique

Journal of Physics: Conference Series

Volumn 34, Issue 1, 2006, Pages 859-864

  Mekaru, Harutaka ^a   Takano, Takayuki ^a   Awazu, Koichi ^a   Maeda, Ryutaro ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744527739     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/142     Document Type: Article

References (6)

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4. Lärmer F and Schilp A 1992 German patent DE4241045
5. Fujiwara N, Maruyama T and Yoneda M 1995 Japan. J. Appl. Phys. 34 2095-2100
6. McAuley A S, Ashraf H, Atabo L, Chambers A, Hall S, Hopkins J and Nicholls G 2001 J. Phys. D: Appl. Phys. 34 2769-2774