Tunneling effects in light-emitting diodes based on InGaN/AIGaN/GaN heterostructures with quantum wells

Semiconductors

Volumn 31, Issue 11, 1997, Pages 1123-1127

  Kudryashov, V E ^a   Zolin, K G ^a   Turkin, A N ^a   Yunovich, A E ^a   Kovalev, A N ^b   Manyakhin, F I ^b  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b NATIONAL UNIVERSITY OF SCIENCE AND TECHNOLOGY MISIS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041047771     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187278     Document Type: Article

References (14)

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3. A. N. Kovalev, V. E. Kudryashov, F. I. Manyachin, A. N. Turkin, K. G. Zolina, and A. E. Yunovich in Abstracts 23rd International Symp. on Semiconductor Compounds, St. Petersburg, 1996), Abstr. 03.P3.04.
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