Effect of off stoichiometry on Raman scattering from epitaxial and polycrystalline HfNx (0.85x1.50) grown on MgO(001)

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Stoehr, M ^a,b   Seo, H S ^a   Petrov, I ^a   Greene, J E ^a  

^a United States of America   (United States)

^b UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTICS; ARCHITECTURAL ACOUSTICS; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); CRYSTAL STRUCTURE; CRYSTAL SYMMETRY; DEFECT DENSITY; DIFFRACTIVE OPTICAL ELEMENTS; EPITAXIAL LAYERS; FINANCIAL DATA PROCESSING; HAFNIUM; METALS; NITRIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCATTERING; SODIUM CHLORIDE; STOICHIOMETRY; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSITION METALS; VACANCIES;

ACOUSTIC MODES; ACOUSTIC SCATTERING; ANTI-SITE DEFECTS; ELECTRON CARRIERS; FIRST ORDERS; FIRST-ORDER SCATTERING; FREQUENCY SHIFTING; HIGHER FREQUENCIES; LATTICE DISORDER; LATTICE PARAMETERS; LOCAL ORDER; NITRIDE LAYERS; OPTICAL MODES; PHONON ANOMALIES; POLY-CRYSTALLINE; SECOND ORDERS; SUPERCONDUCTING TRANSITIONS; TWO-PHASE MIXTURES; UNIT CELLS; VACANCY CONCENTRATIONS; VALENCE ELECTRONS;

ACOUSTIC WAVE SCATTERING;

EID: 49749145323     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2961332     Document Type: Article

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