Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2469-2473

  Liliental Weber, Z ^a   Lu, H ^b   Schaff, W J ^b   Kryliouk, O ^c   Park, H J ^c   Mangum, J ^c   Anderson, T ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Cornell University   (United States)

^c University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPI-LAYERS; INN LAYERS; NANORODS GROWN; NITRIDE SEMICONDUCTORS; STRUCTURAL PERFECTION; TRANSMISSION ELECTRON;

CRYSTALS; ELECTRIC CONDUCTIVITY; NITRIDES;

SEMICONDUCTOR MATERIALS;

EID: 49749135505     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674907     Document Type: Conference Paper

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