Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2597-2600

  Collazo, R ^a   Mita, S ^a   Dalmau, R ^a   Sitar, Z ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE; DEPTH PROFILING; ELECTRICAL PROPERTIES; GAN FILMS; GAN THIN FILMS; GROWTH RATES; INVERSION DOMAINS; N-TYPE CONDUCTIVITIES; NITRIDE SEMICONDUCTORS; NUCLEATION LAYER; NUCLEATION LAYERS; POLAR FILMS; POLARITY CONTROL; PROCESSING CONDITIONS; SPECULAR X-RAY REFLECTIVITY;

CORUNDUM; CRYSTALS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; NITRIDES; NUCLEATION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; THICK FILMS;

SEMICONDUCTING GALLIUM;

EID: 49749135138     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674874     Document Type: Conference Paper

References (5)

1. R. Collazo, S. Mita, R. Schlesser, and Z. Sitar, phys. stat. sol (c) 2, 2117 (2005).
2. R. Collazo, S. Mita, A. Aleksov, R. Schlesser, and Z. Sitar, J. Cryst. Growth 287, 586 (2006).
3. A. Aleksov, R. Collazo, S. Mita, R. Schelesser, and Z. Sitar, Appl. Phys. Lett. 89, 052117 (2006).
4. K. Dovidenko et al., MRS Internet J. Nitride Semicond. Res. 4S1, G 6.46 (1999).
5. A. Nelson, J. Appl. Crystallogr. 39, 273 (2006).