Key power semiconductor devices and development trends

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 743-750

  Lorenz, Leo ^a  

^a Infineon Technologies: Munich   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEVELOPMENT TRENDS; DRIVING FORCES; DYNAMIC CHARACTERISTICS; FAST-SWITCHING SPEED; HIGH POWER DENSITY; KEY COMPONENTS; KEY FACTORS; LONG-TERM RELIABILITY; LOW VOLTAGES; MULTI-CHIP; OPERATING TEMPERATURES; OVERLOAD CAPABILITIES; PARASITICS; POWER ELECTRONIC SYSTEMS; POWER SEMICONDUCTOR DEVICES; POWER UNITS; ROAD MAPS; SILICON DEVICES; SOFT SWITCHING; SUPERJUNCTION DEVICES; SYSTEM COMPATIBILITY; SYSTEM INTEGRATION; SYSTEM RELIABILITY;

ACTIVE FILTERS; CHIP SCALE PACKAGES; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC PULSE; ELECTRONIC EQUIPMENT MANUFACTURE; INTEGRATED CIRCUITS; MOSFET DEVICES; NONMETALS; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; SILICON CARBIDE;

ELECTRONICS PACKAGING;

EID: 49749121534     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472627     Document Type: Conference Paper

References (12)

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