Defect-selective etching of aluminum nitride single crystals

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2609-2612

  Bickermann, M ^a   Schmidt, S ^a   Epelbaum, B M ^a   Heimann, P ^a   Nagata, S ^b   Winnacker, A ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JFE Mineral Company Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN SINGLE CRYSTALS; ALUMINUM NITRIDE; AS-GROWN; BASAL PLANES; BULK MATERIALS; DEFECT-SELECTIVE ETCHING; EDGE DISLOCATIONS; ETCH PIT DENSITY; ETCH PITS; MOLTEN NAOH; NITRIDE SEMICONDUCTORS; SCREW DISLOCATIONS; SELECTIVE WET CHEMICAL ETCHING; SURFACE AREA; TOTAL ETCHING;

ALUMINA; ALUMINUM; ALUMINUM COMPOUNDS; CHLORINE COMPOUNDS; CRYSTAL DEFECTS; CRYSTALLOGRAPHY; CRYSTALS; DEFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ETCHING; LIGHT METALS; NITRIDES; NITROGEN; NONMETALS; POWDERS; SEMICONDUCTOR MATERIALS; SURFACE DEFECTS; WET ETCHING;

SINGLE CRYSTALS;

EID: 49749116776     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674724     Document Type: Conference Paper

References (7)

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