Measurement of nano-displacement based on in-plane suspended-gate MOSFET detection compatible will a front-end CMOS process

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 51, Issue , 2008, Pages 332-334

  Colinet, E ^a   Durand, C ^b,c   Audebert, P ^a   Renaux, P ^a   Mercier, D ^a   Duraffourg, L ^a   Ollier, E ^a   Casset, F ^a   Ancey, P ^b   Buchaillot, L ^c   Ionescu, A M ^d  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT D ELECTRONIQUE   (France)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; DISPLACEMENT MEASUREMENT;

CMOS CHIPS; CMOS PROCESSS; DISPLACEMENT-BASED; EQUIVALENT CAPACITANCE; FRONT END; IN-PLANE SUSPENDED-GATE MOSFET;

MOSFET DEVICES;

EID: 49549122930     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2008.4523192     Document Type: Conference Paper

References (8)

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