Structure and recombination properties of extended defects in the dislocation slip plane in silicon

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 3100-3104

  Eremenko, V ^a   Yakimov, E ^a   Abrosimov, N ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL VOLUME; DISLOCATION SLIP; EXTENDED DEFECTS; HIGH-DENSITY; INTERNATIONAL CONFERENCES; SLIP PLANES;

CRYSTALS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; EXPLOSIVE ACTUATED DEVICES; NONMETALS; PHOTORESISTS; SEMICONDUCTOR MATERIALS; SILICON;

DEFECTS;

EID: 49549094295     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675462     Document Type: Conference Paper

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