Novel 30 V P-channel trench gate power MOSFET with ultra low on-state-resistance at low-gate-voltage

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 285-288

  Narazaki, A ^a   Hisamoto, Y ^a   Tadokoro, C ^a   Takeda, M ^a   Hagino, H ^a  

^a Fukuryo Semicon Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE STRUCTURES;

TRENCH GATE STRUCTURE;

MOSFET DEVICES;

EID: 0030713238     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)