Optimized 1200V silicon trench IGBTs with silicon carbide Schottky diodes

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 5, Issue , 2000, Pages 2928-2933

  Winterhalter, C ^a   Chang, H R ^a   Gupta, R N ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRIDGE CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MOS DEVICES; OPTIMIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS; SILICON CARBIDE;

POWER LOSS; SCHOTTKY FREE WHEELING DIODES; SHORT CIRCUIT SAFE OPERATING AREAS; VOLTAGE DROP;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0034501155     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)