Fast reverse recovery body diode in high-voltage VDMOSFET using cell-distributed Schottky contacts

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1422-1425

  Cheng, Xu ^a   Sin, Johnny K O ^b   Kang, Baowei ^a   Feng, Chuguang ^a,c   Wu, Yu ^a   Liu, Xingming ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c Taiji Group   (China)

Author keywords

Body diode; Recovery speed; Schottky contact; VDMOSFET

Indexed keywords

ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; THRESHOLD VOLTAGE;

CELL-DISTRIBUTED SCHOTTKY CONTACTS; FAST REVERSE RECOVERY BODY DIODE;

MOSFET DEVICES;

EID: 0041672231     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813226     Document Type: Article

References (10)

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