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Volumn 13, Issue 4, 1998, Pages 667-673

Conduction power loss in MOSFET synchronous rectifier with parallel-connected Schottky barrier diode

Author keywords

Conduction power loss; dc dc converter; MOSFET; Schottky barrier diode; Synchronous rectifier

Indexed keywords

MOSFET DEVICES; POWER CONVERTERS;

EID: 0032122110     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/63.704135     Document Type: Article
Times cited : (43)

References (16)
  • 1
    • 0020275424 scopus 로고
    • Improving power supply efficiency with MOSFET synchronous rectifiers
    • R. S. Kagan, M. Chi, and C. Hu, "Improving power supply efficiency with MOSFET synchronous rectifiers," in Proc. POWERCON9, 1982, p. D-4.
    • (1982) Proc. POWERCON9
    • Kagan, R.S.1    Chi, M.2    Hu, C.3
  • 11
    • 0029358459 scopus 로고
    • Evaluation of synchronous-rectification efficiency improvement limits in forward converters
    • M. M. Jovanovic, M. T. Zhang, and F. C. Lee, "Evaluation of synchronous-rectification efficiency improvement limits in forward converters," IEEE Trans. Ind. Electron., vol. 42, no. 4, pp. 387-395, 1995.
    • (1995) IEEE Trans. Ind. Electron. , vol.42 , Issue.4 , pp. 387-395
    • Jovanovic, M.M.1    Zhang, M.T.2    Lee, F.C.3
  • 14
    • 33747982850 scopus 로고
    • A comparison of silicon UMOS-FET's versus GaAs vertical FET's for low voltage, synchronous rectification at 2.5 MHz
    • May
    • R. Kollman, G. Sills, and J. Yuan, "A comparison of silicon UMOS-FET's versus GaAs vertical FET's for low voltage, synchronous rectification at 2.5 MHz," in Proc. High Frequency Power Conversion Conf. (HFPC), May 1992, pp. 112-123.
    • (1992) Proc. High Frequency Power Conversion Conf. (HFPC) , pp. 112-123
    • Kollman, R.1    Sills, G.2    Yuan, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.