Generation of nano-sized free standing single crystal silicon particles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1923-1930

  Dong, Y ^a   Bapat, A ^b   Hilchie, S ^a   Kortshagen, U ^b   Campbell, S A ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH DENSITY PLASMA; SINGLE CRYSTAL SILICON PARTICLES; SOURCE GAS; THERMAL EVAPORATION;

AMORPHOUS MATERIALS; ANNEALING; CHARGED PARTICLES; MIXTURES; MOSFET DEVICES; PARTICLE SIZE ANALYSIS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DEVICES; SILICON; SINGLE CRYSTALS; TEMPERATURE CONTROL;

NANOSTRUCTURED MATERIALS;

EID: 4944223918     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1771667     Document Type: Article

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