Noncontact inspection technique for electrical failures in semiconductor devices using a laser terahertz emission microscope

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Yamashita, Masatsugu ^a   Otani, Chiko ^a   Kawase, Kodo ^a,b   Nikawa, Kiyoshi ^c   Tonouchi, Masayoshi ^d  

^a RIKEN   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AEROSPACE VEHICLES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; KETONES; LASERS; METALS; MOSFET DEVICES; NETWORKS (CIRCUITS); NONMETALS; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON; ULTRAFAST PHENOMENA;

ELECTRICAL FAILURES; INTERCONNECTION STRUCTURES; LASER TERAHERTZ EMISSION MICROSCOPE; METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR; NON-CONTACT INSPECTION; P-N JUNCTIONS; SEMICONDUCTOR CIRCUITS; TERAHERTZ EMISSIONS; TERAHERTZ PULSES; ULTRAFAST LASER PULSES; WAVEFORMS;

SEMICONDUCTOR JUNCTIONS;

EID: 49149110715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965810     Document Type: Article

References (9)

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