Structural modification and enhanced field emission on ultrananocrystalline diamond films by nitrogen ion implantation

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1812-1816

  Joseph, P T ^a   Tai, N H ^a   Niu, H ^a   Palnitkar, U A ^b   Pong, W F ^b   Cheng, H F ^c   Lin, I N ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAMKANG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

Author keywords

Electron field emission; Ion implantation; UNCD

Indexed keywords

AMORPHOUS CARBON; AMORPHOUS FILMS; ANNEALING; DIAMONDS; FIELD EMISSION; ION BOMBARDMENT; ION IMPLANTATION; IONS; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURED MATERIALS; NITROGEN; NONMETALS;

AMORPHOUS PHASE; ANNEALING PROCESSING; ELECTRON FIELD EMISSION; ENHANCED FIELD EMISSION; HIGH-DOSE ION IMPLANTATION; LOW-DOSE; NITROGEN ION IMPLANTATIONS; STRUCTURAL MODIFICATIONS; ULTRANANOCRYSTALLINE DIAMOND; ULTRANANOCRYSTALLINE DIAMOND FILMS; UNCD;

DIAMOND FILMS;

EID: 48849104024     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.03.032     Document Type: Article

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