Calculated structural, electronic and optical properties of Ga-based semiconductors under pressure

Physica B: Condensed Matter

Volumn 403, Issue 18, 2008, Pages 3077-3088

  Parashari, Satyam S ^a   Kumar, S ^a   Auluck, S ^b  

^a M J P ROHILKHAND UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

Electronic structure; Optical properties; Pressure coefficients

Indexed keywords

ATOMS; EIGENVALUES AND EIGENFUNCTIONS; FLUID MECHANICS; GALLIUM ALLOYS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; OPTICAL MATERIALS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM;

ATOMIC NUMBERING; BULK MODULUS; DEFORMATION POTENTIALS; DIELECTRIC FUNCTIONS; EXPERIMENTAL DATA; EXTINCTION COEFFICIENT (K); FULL POTENTIAL LINEAR AUGMENTED PLANE WAVE (FP-LAPW); LATTICE (CO); LINEAR PRESSURE; MEASURED DATA; NONLINEAR PRESSURE; OPTICAL (PET) (OPET); PRESSURE COEFFICIENTS; PRESSURE DERIVATIVES; SECOND ORDERS; TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); UNDER PRESSURE;

ORGANIC POLYMERS;

EID: 48749104901     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.03.019     Document Type: Article

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