AlGaN/GaN 120W WCDMA doherty amplifier with digital pre-distortion correction

IEEE Wireless and Microwave Technology Conference, WAMICON 2006

Volumn , Issue , 2006, Pages

  Poulton, M J ^a   Leverich, W K ^a   Garber, P ^a   Shealy, J B ^a   Vetury, R ^a   Brown, J D ^a   Green, D S ^a   Gibb, S R ^a   Choi, D K ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL ARITHMETIC; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; MICROWAVE DEVICES; MICROWAVES; NITRIDES; SEMICONDUCTING GALLIUM; TECHNOLOGY;

ALGAN GAN; CLASS A/B; DEVICE TECHNOLOGIES; DIGITAL PRE-DISTORTION (DPD); DOHERTY AMPLIFIERS; DRAIN EFFICIENCY; GALLIUM NITRIDE (GAN); MAXIMUM EFFICIENCY; MAXIMUM POWER; MICROWAVE TECHNOLOGY; OUTPUT POWERS; SINGLE-CARRIER (SC);

GALLIUM NITRIDE;

EID: 48749094529     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WAMICON.2006.351919     Document Type: Conference Paper

References (5)

1. M. J. Poulton, W. K. Leverich, J. B. Shealy, R. Vetury, J. D. Brown, D. S. Green, and S. R. Gibb. "Linearity and efficiency performance of GaN HEMTs with digital pre-distortion correction". 2006 MTT-S IMS Digest, pages 1327-1330, June 2006.
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3. F. H. Raab, P. M. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovich, N. Pothecary, J. F. Sevic, and N. O. Sokal. "RF and microwave power amplifier and transmitter technologies - part 3". High Frequency Electronics, pages 34-48, September 2003.
4. F. H. Raab, P. M. Asbeck, S. Cripps, P. B. Kenington, Z. B. Popovich, N. Pothecary, J. F. Sevic, and N. O. Sokal. "RF and microwave power amplifier and transmitter technologies - part 4". High Frequency Electronics, pages 38-49, November 2003.
5. R. Vetury, Y. Wei, D. S. Green, S. R. Gibb, T. W. Mercier, K. Leverich, P. M. Garber, M. J. Poulton, and J. B. Shealy. "High power, high efficiency, AlGaN/GaN HEMT technology for wireless base station applications". 2005 MTT-S IMS Digest, pages 487-490, June 2005.