Integrated InGaAs pin-diode on exactly oriented silicon (001) substrate suitable for 10 Gbit/s digital applications

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 2007, Pages 180-181

  Poloczek, A ^a   Weiss, M ^a   Fedderwitz, S ^a   Stoehr, A ^a   Prost, W ^a   Jaeger, D ^a   Tegude, F J ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM; SILICON;

10-GBIT/S; ANNUAL MEETINGS; ELECTRO-OPTICS; P-I-N DIODES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48649104104     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2007.4382336     Document Type: Conference Paper

References (4)

1. nd International Conference on Group IV Photonics, Antwerp, Belgium, 2005
2. A. Bakin et. al., "Growth of InP Layers on Nanometer-Scale patterned Si Substrate," Crystal Growth and Design, vol. 3, pp. 89-93, 2003
3. th InP & Related Materials, Kagoshima City, Japan, 2004
4. W. Prost et. al., "High Performance III/V RTD and PIN Diode on a Silicon Substrate,"Appl. Phys. A 87, 539-544 (2007)