Laser-induced photoluminescence enhancement in a room-temperature emitting SiGe-based alloy quantum well

Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1449-L1451

  Hippo, Daihei ^a   Sugawara, Yoshitaka ^a   Kishimoto, Yosuke ^a   Kawamoto, Kiyoshi ^a   Fukatsu, S ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Laser induced luminescence enhancement; Modified defect reduction model; Photoluminescence; Quantum well; Recombination enhanced defect reaction; SiGe

Indexed keywords

DEFECTS; LASER EXCITATION; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SILICON ALLOYS; STATISTICAL MECHANICS;

DEFECT REDUCTION; EXCITATION POWER DENSITY; IRREVERSIBLE PROCESS; LASER-INDUCED PHOTOLUMINESCENCE; LUMINESCENCE ENHANCEMENTS; PHOTOLUMINESCENCE INTENSITIES; RECOMBINATION-ENHANCED DEFECT REACTIONS; SIGE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 48649088838     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.L1449     Document Type: Article

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