Defect annealing in a II-VI laser diode structure under intense optical excitation

Applied Physics Letters

Volumn 72, Issue 2, 1998, Pages 194-196

  Jordan, C ^a   Fewer, D T ^a   Donegan, J F ^a   McCabe, E M ^a   Huynh, A ^a   Logue, F P ^a   Taniguchi, S ^b   Hino, T ^b   Nakano, K ^b   Ishibashi, A ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEGRADATION; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL MICROSCOPY; OPTICAL PUMPING; PHOTOLUMINESCENCE; POINT DEFECTS; PULSED LASER APPLICATIONS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DEFECT ANNEALING; OPTICAL ANNEALING; OPTICAL EXCITATION; SEPARATE CONFINEMENT HETEROSTRUCTURE;

SEMICONDUCTOR LASERS;

EID: 0031699422     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120682     Document Type: Article

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