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Volumn 56, Issue 15, 2008, Pages 3940-3950
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Atomic mobilities, diffusivities and simulation of diffusion growth in the Co-Si system
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Author keywords
Atomic mobility; Co Si system; Diffusion growth; First principles calculations
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Indexed keywords
ACTIVATION ENERGY;
ARSENIC COMPOUNDS;
ATOMIC PHYSICS;
ATOMS;
COBALT;
COBALT COMPOUNDS;
GROWTH (MATERIALS);
METALLIC COMPOUNDS;
SEMICONDUCTOR DOPING;
SILICON;
SILICON ALLOYS;
BINARY COMPOUNDS;
DIFFUSION ACTIVATION ENERGY;
DIFFUSION COEFFICIENTS;
DIFFUSION PHENOMENA;
DIFFUSIVITIES;
EXPERIMENTAL DATA;
FIRST-PRINCIPLES CALCULATIONS;
HOMOGENEITY RANGES;
IMPURITY DIFFUSION;
SIMULATION PACKAGES;
SOLID PHASES;
TEMPERATURE RANGES;
DIFFUSION;
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EID: 48449105413
PISSN: 13596454
EISSN: None
Source Type: Journal
DOI: 10.1016/j.actamat.2008.04.017 Document Type: Article |
Times cited : (70)
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References (71)
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