Atomic mobilities, diffusivities and simulation of diffusion growth in the Co-Si system

Acta Materialia

Volumn 56, Issue 15, 2008, Pages 3940-3950

  Zhang, L ^a   Du, Y ^a   Ouyang, Y ^b   Xu, H ^a   Lu, X G ^c   Liu, Y ^d   Kong, Y ^a   Wang, J ^a  

^a CENTRAL SOUTH UNIVERSITY   (China)

^b GUANGXI UNIVERSITY   (China)

^c Stockholm Technology Park   (Sweden)

^d MONTANA STATE UNIVERSITY   (United States)

Author keywords

Atomic mobility; Co Si system; Diffusion growth; First principles calculations

Indexed keywords

ACTIVATION ENERGY; ARSENIC COMPOUNDS; ATOMIC PHYSICS; ATOMS; COBALT; COBALT COMPOUNDS; GROWTH (MATERIALS); METALLIC COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON ALLOYS;

BINARY COMPOUNDS; DIFFUSION ACTIVATION ENERGY; DIFFUSION COEFFICIENTS; DIFFUSION PHENOMENA; DIFFUSIVITIES; EXPERIMENTAL DATA; FIRST-PRINCIPLES CALCULATIONS; HOMOGENEITY RANGES; IMPURITY DIFFUSION; SIMULATION PACKAGES; SOLID PHASES; TEMPERATURE RANGES;

DIFFUSION;

EID: 48449105413     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.04.017     Document Type: Article

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