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Volumn 56, Issue 15, 2008, Pages 3940-3950

Atomic mobilities, diffusivities and simulation of diffusion growth in the Co-Si system

Author keywords

Atomic mobility; Co Si system; Diffusion growth; First principles calculations

Indexed keywords

ACTIVATION ENERGY; ARSENIC COMPOUNDS; ATOMIC PHYSICS; ATOMS; COBALT; COBALT COMPOUNDS; GROWTH (MATERIALS); METALLIC COMPOUNDS; SEMICONDUCTOR DOPING; SILICON; SILICON ALLOYS;

EID: 48449105413     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.04.017     Document Type: Article
Times cited : (70)

References (71)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.