SCOPUS 정보 검색 플랫폼

Proceedings of IEEE Sensors

Volumn , Issue , 2007, Pages 570-572

Resonant detection and modulation of terahertz radiation by 2DEG plasmons in GaN grating-gate structures

(6) Pala, Nezih a,b,c Veksler, Dmitry c Muravjov, Andrey c Stillman, William c Gaska, Remis b Shur, M S a,c

a IEEE

b SENSOR ELECTRONIC TECHNOLOGY INC (United States)

c RENSSELAER POLYTECHNIC INSTITUTE (United States)

Author keywords

Detectors; Gallium nitride; Modulators; Terahertz

Indexed keywords

ABSORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GAS ABSORPTION; GAS LASERS; LASERS; MODULATION; NITRIDES; OPTICAL DATA STORAGE; PLASMONS; QUANTUM OPTICS; SEMICONDUCTING GALLIUM; SENSORS;

ABSORPTION PEAKS; ALGAN/GAN; APPLICATIONS.; BROADBAND RADIATIONS; FTIR SYSTEMS; GATE DEVICES; GATE STRUCTURES; PLASMON EXCITATIONS; PLASMONIC DEVICES; RESONANT ABSORPTIONS; RESONANT DETECTIONS; TERAHERTZ; TERAHERTZ RADIATIONS; THZ RADIATIONS;

GALLIUM ALLOYS;

EID: 48349113833 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ICSENS.2007.4388462 Document Type: Conference Paper

Times cited : (9)

References (6)

1
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2
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- Knap, W.¹ Kachorovskii, V.² Deng, Y.³ Rumyantsev, S.⁴ Lu, J.Q.⁵ Gaska, R.⁶ Shur, M.S.⁷ Simin, G.⁸ Hu, X.⁹ Asif Khan, M.¹⁰ Saylor, C.A.¹¹ Brunel, L.C.¹²

3
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- Terahertz detection by GaN/AlGaN transistors
- El Fatimy, N. Dyakonova, F. Teppe, W. Knap, D. B. Veksler, S. Rumyantsev, M. S. Shur, N. Pala, R. Gaska, Q. Fareed, X. Hu, D. Seliuta, G. Valusis, Gaquiere, D. Theron, and A. Cappy, "Terahertz detection by GaN/AlGaN transistors", IEEE Electronics Letters 42, 1342 (2006).
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4
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- Resonant excitation of plasma oscillations in a partially gated two-dimensional electron layer
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5
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- Cooperative absorption of terahertz radiation by plasmon modes in an array of field-effect transistors with two-dimensional electron channel
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6
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- Higher Order Plasmon Resonances in GaN-based Field-Effect Transistor Arrays
- V.V. Popov, M.S. Shur, G.M. Tsymalov, D.V. Fatev, "Higher Order Plasmon Resonances in GaN-based Field-Effect Transistor Arrays, International Journal of High Speed Electronics and Systems, in-print.
- International Journal of High Speed Electronics and Systems, in-print
- Popov, V.V.¹ Shur, M.S.² Tsymalov, G.M.³ Fatev, D.V.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.