Flash lamp annealing latest technology for 45nm device and future devices

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 65-71

  Kiyama, H ^a  

^a DAINIPPON SCREEN MFG CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

65NM-GENERATION DEVICES; FLASH LAMP ANNEALING; FLASH LAMPS; FUTURE GENERATIONS; LATEST TECHNOLOGIES; PROCESS REQUIREMENTS; SILICIDATION;

ANNEALING; CONTROL THEORY; CONTROLLABILITY; CRYSTALS; ELECTRIC CONDUCTIVITY; INTERNET PROTOCOLS; PLASMAS; SEMICONDUCTOR MATERIALS;

RAPID THERMAL ANNEALING;

EID: 48349090352     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.367983     Document Type: Conference Paper

References (7)

1. T.Ito et al. "10-15nm Ultrashallow Junction Formation by Flash-Lamp Annealing", JJAP Vol.41 2002 pp2394-2398 Part 1,No.4B, April 2002
2. T.Ito et al., " Minimization of Pattern Dependence by Optimized Flash Lamp Annealing" , 5th International Workshop on Junction Technology 2005 , P59-60
3. T. Fukuda , SEMI Japan 2005 Transition to NExt Generation Wafer p3 , "Critical Issues on Wafer Geometry -The Impact of Edge Exclusion Reduction and Flash Lamp Annealing "
4. T.Yamaguchi et al., Advanced Metalization Conference 2005 p24
5. K.Kashihara et al., "Improvement of thermal stability of nickel suicide using N2 ion implantation prior to nickel film deposition" , Workshop on Junction Technology 2006 June.
6. Selete Annual Report 2003 , p13
7. T. Matsuki et al., "Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal-Insulator-Semiconductor Field-Effect Transistors with NiSi Source/Drain" ,Japanese Journal of Applied Physics Vol. 45, No. 4B, 2006, pp. 2939-2944