On the width of the recombination zone in ambipolar organic field effect transistors

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Kemerink, M ^a   Charrier, D S H ^a   Smits, E C P ^b,c   Mathijssen, S G J ^a,b   De Leeuw, D M ^b,c   Janssen, R A J ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATES (TRANSISTOR); NUMERICAL ANALYSIS; TRANSISTORS;

ACCUMULATION LAYERS; AMBIPOLAR; AMERICAN INSTITUTE OF PHYSICS (AIP); ANALYTICAL MODELLING; LANGEVIN RECOMBINATION; NUMERICAL CALCULATIONS; ORGANIC FIELD EFFECT TRANSISTORS (OFETS); ORGANIC LIGHT EMITTING FIELD EFFECT TRANSISTORS; POTEN TIAL PROFILE; RECOMBINATION ZONE (RZ);

FIELD EFFECT TRANSISTORS;

EID: 48249153892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2963488     Document Type: Article

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