Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Swensen, James S ^a   Yuen, Jonathan ^a   Gargas, Dan ^b   Buratto, Steven K ^b   Heeger, Alan J ^b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR SEMICONDUCTING POLYMERS; DRAIN ELECTRODES; GOLD ELECTRODES; LIGHT EMITTING FIELD-EFFECT TRANSISTORS (LEFET);

BAND STRUCTURE; CARRIER CONCENTRATION; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; LIGHT EMISSION; MICROFABRICATION;

SEMICONDUCTING POLYMERS;

EID: 34547219926     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2752582     Document Type: Article

References (12)

1. J. S. Swensen, C. Soci, and A. J. Heeger, Appl. Phys. Lett. 87, 253511 (2005).
2. J. Zaumseil, R. H. Friend, and H. Sirringhaus, Nat. Mater. 5, 69 (2006).
3. J. Zaumseil, C. L. Donley, J.-S. Kim, R. H. Friend, and H. Sirringhaus, Adv. Mater. (Weinheim, Ger.) 18, 2708 (2006).
4. D. L. Smith and P. P. Ruden, Appl. Phys. Lett. 89, 233519 (2006).
5. L.-L. Chua, J. Zaumseil, J.-F. Chang, E. C. W. Ou, P. K. H. Ho, H. Sirringhaus, and R. H. Friend, Nature (London) 434, 194 (2005).
6. J. S. Swensen, C. Soci, and A. J. Heeger, Proc. SPIE 6117, 61170R-8 (2006).
7. M. Ahles, A. Hepp, R. Schmechel, and H. von Seggern, Appl. Phys. Lett. 84, 428 (2004).
8. A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, and H. von Seggern, Phys. Rev. Lett. 91, 157406 (2003).
9. K. D. Weston, P. J. Carson, H. Metiu, and S. K. Buratto, J. Chem. Phys. 109, 7474 (1998).
10. A. Salleo and R. A. Street, J. Appl. Phys. 94, 471 (2003).
11. J. S. Swensen, Light Emission from an Ambipolar Semiconducting Polymer Field Effect Transistor (University of California at Santa Barbara, Santa Barbara, CA, 2007).
12. A. S. Dhoot, G. M. Wang, D. Moses, and A. J. Heeger, Phys. Rev. Lett. 96, 246403 (2006).