Ambipolar transport behavior in In2 O3 /pentacene hybrid heterostructure and their complementary circuits

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Dhananjay, ^a   Ou, Chun Wei ^b   Yang, Chuan Yi ^b   Wu, Meng Chyi ^b   Chu, Chih Wei ^a,c  

^a RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; GATE DIELECTRICS; GATES (TRANSISTOR); HETEROJUNCTIONS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; TRANSPORT PROPERTIES;

AMBIPOLAR TRANSISTORS; AMBIPOLAR TRANSPORT; AMERICAN INSTITUTE OF PHYSICS (AIP); BI LAYERS; COMPLEMENTARY CIRCUITS; HETERO STRUCTURES; HETEROSTRUCTURES; HYBRID STRUCTURES; N CHANNEL; P-CHANNEL; PENTACENE (PEN); SI(2 1 1) SUBSTRATES; VOLTAGE GAIN;

OZONE WATER TREATMENT;

EID: 48249146647     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2949872     Document Type: Article

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